PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH

A photoconductive semiconductor switch comprising a photoconductive GaAs substrate having a pair of spaced metal contacts on a surface thereof, the spaced metal contacts opposite ends of a switching gap, the switching gap having a plurality of lateral current flow preventing channels therein, the ch...

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Main Authors EVAN, HOWARD, BLANE, JR, BHATTACHARYA, RABI, S
Format Patent
LanguageEnglish
French
Published 26.11.2015
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Abstract A photoconductive semiconductor switch comprising a photoconductive GaAs substrate having a pair of spaced metal contacts on a surface thereof, the spaced metal contacts opposite ends of a switching gap, the switching gap having a plurality of lateral current flow preventing channels therein, the channels being formed by ion implantation of the GaAs substrate in the channels. L'invention concerne un commutateur à semi-conducteur photoconducteur comprenant un substrat de GaAs photoconducteur ayant une paire de contacts métalliques espacés sur une de ses surfaces, les extrémités opposées des contacts métalliques espacés formant un espace de commutation, l'espace de commutation ayant une pluralité de canaux de prévention de circulation de courant latéraux, les canaux étant formés par implantation ionique du substrat de GaAs dans les canaux.
AbstractList A photoconductive semiconductor switch comprising a photoconductive GaAs substrate having a pair of spaced metal contacts on a surface thereof, the spaced metal contacts opposite ends of a switching gap, the switching gap having a plurality of lateral current flow preventing channels therein, the channels being formed by ion implantation of the GaAs substrate in the channels. L'invention concerne un commutateur à semi-conducteur photoconducteur comprenant un substrat de GaAs photoconducteur ayant une paire de contacts métalliques espacés sur une de ses surfaces, les extrémités opposées des contacts métalliques espacés formant un espace de commutation, l'espace de commutation ayant une pluralité de canaux de prévention de circulation de courant latéraux, les canaux étant formés par implantation ionique du substrat de GaAs dans les canaux.
Author EVAN, HOWARD, BLANE, JR
BHATTACHARYA, RABI, S
Author_xml – fullname: EVAN, HOWARD, BLANE, JR
– fullname: BHATTACHARYA, RABI, S
BookMark eNrjYmDJy89L5WRQCfDwD_F39vdzCXUO8QxzVQh29fWEcv2DFILDPUOcPXgYWNMSc4pTeaE0N4OymytQXDe1ID8-tbggMTk1L7UkPtzfyMDQxNDU0sLAxNHYmDhVACrlJjA
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
DocumentTitleAlternate COMMUTATEUR À SEMI-CONDUCTEUR PHOTOCONDUCTEUR
ExternalDocumentID WO2014159804A3
GroupedDBID EVB
ID FETCH-epo_espacenet_WO2014159804A33
IEDL.DBID EVB
IngestDate Fri Jul 19 11:24:46 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
French
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_WO2014159804A33
Notes Application Number: WO2014US25199
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151126&DB=EPODOC&CC=WO&NR=2014159804A3
ParticipantIDs epo_espacenet_WO2014159804A3
PublicationCentury 2000
PublicationDate 20151126
PublicationDateYYYYMMDD 2015-11-26
PublicationDate_xml – month: 11
  year: 2015
  text: 20151126
  day: 26
PublicationDecade 2010
PublicationYear 2015
RelatedCompanies EVAN, HOWARD, BLANE, JR
BHATTACHARYA, RABI, S
UES, INC
RelatedCompanies_xml – name: UES, INC
– name: BHATTACHARYA, RABI, S
– name: EVAN, HOWARD, BLANE, JR
Score 3.0123491
Snippet A photoconductive semiconductor switch comprising a photoconductive GaAs substrate having a pair of spaced metal contacts on a surface thereof, the spaced...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION
SEMICONDUCTOR DEVICES
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
Title PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151126&DB=EPODOC&locale=&CC=WO&NR=2014159804A3
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMTcwT7M0STPWNTRKtNAF1vhGuknAXrNuappxWoqhhaVpsilog7Ovn5lHqIlXhGkEE0MObC8M-JzQcvDhiMAclQzM7yXg8roAMYjlAl5bWayflAkUyrd3C7F1UYP2jg1BzQczNRcnW9cAfxd_ZzVnZ2C_Tc0vCCQHrKosLQxMHI2ZGVhBB2-BTtp3DXMC7UspQK5U3AQZ2AKA5uWVCDEwpeYJM3A6w-5eE2bg8IVOeQOZ0NxXLMKgEuDhH-Lv7O_nEuoc4hnmqhAMCkQI1z9IITjcM8TZQ5RB2c0VSOsCrYuH-y4-3B_ZbcZiDCzAfn-qBINCiomhpbmpabJBqpmZCejQlqQUCwvDRENjYBsv0dQoRZJBBp9JUvilpRm4QOEF2lZnZCbDwFJSVJoqC6xfS5LkwMECABWgeQg
link.rule.ids 230,308,780,885,25564,76547
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5qFetNq1K1asCSW7Cbdw5F7KYl0SYb2vRxK3mCILXYiH_f2ZhqTz3tY2AfA7PfzO7ODEDH6Bq5peaKROTIlBDxZSlGq1nKciVPiWlpicYdnD1fd6bqy0Jb1OB96wtTxgn9LoMjokQlKO9FeV6v_y-x7PJv5eYxfsOuj6dh2LPFyjomXH3QRbvfGwTMZlSkFO020R9zGkKVZXbVZ-UADg2ec5crT7M-90tZ74LK8BSOAhxvVZxBLVs1oUG3udeacOxVT95YraRvcw6dwGEho8y3pzR0ZwNhwpn422RjYTJ3Q-pcwMNwgKWE0y3_drecs921KZdQR7s_a4GQqsQyNC3pZrqu8qAtcWqaJCIK6niRJqdX0N430vV-8j00nNAbLUeu_3oDJ5x33MVO1ttQLz6_slvE2iK-K1n0A-s0e_k
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=PHOTOCONDUCTIVE+SEMICONDUCTOR+SWITCH&rft.inventor=EVAN%2C+HOWARD%2C+BLANE%2C+JR&rft.inventor=BHATTACHARYA%2C+RABI%2C+S&rft.date=2015-11-26&rft.externalDBID=A3&rft.externalDocID=WO2014159804A3