PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH

• Main Authors: EVAN, HOWARD, BLANE, JR, BHATTACHARYA, RABI, S
• Format: Patent
• Language: English; French
• Published: 26.11.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

A photoconductive semiconductor switch comprising a photoconductive GaAs substrate having a pair of spaced metal contacts on a surface thereof, the spaced metal contacts opposite ends of a switching gap, the switching gap having a plurality of lateral current flow preventing channels therein, the channels being formed by ion implantation of the GaAs substrate in the channels. L'invention concerne un commutateur à semi-conducteur photoconducteur comprenant un substrat de GaAs photoconducteur ayant une paire de contacts métalliques espacés sur une de ses surfaces, les extrémités opposées des contacts métalliques espacés formant un espace de commutation, l'espace de commutation ayant une pluralité de canaux de prévention de circulation de courant latéraux, les canaux étant formés par implantation ionique du substrat de GaAs dans les canaux.