CURVED DIFFRACTION GRATING, PRODUCTION METHOD THEREFOR, AND OPTICAL DEVICE

Provided is a technology for the preparation of a high-precision diffraction grating, whereby a curved diffraction grating having a desired curvature can be prepared by plastically deforming, along a curved substrate, a planar diffraction grating prepared on a silicon substrate by a semiconductor pr...

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Bibliographic Details
Main Authors EBATA YOSHISADA, AONO TAKANORI, WATANABE TETSUYA, MATSUI SHIGERU
Format Patent
LanguageEnglish
French
Japanese
Published 25.09.2014
Subjects
AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PERFORMING OPERATIONS
PHYSICS
SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR
SHAPING OR JOINING OF PLASTICS
TRANSPORTING
WORKING OF PLASTICS
WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
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Summary:Provided is a technology for the preparation of a high-precision diffraction grating, whereby a curved diffraction grating having a desired curvature can be prepared by plastically deforming, along a curved substrate, a planar diffraction grating prepared on a silicon substrate by a semiconductor process. The technology is characterized by obtaining a curved diffraction grating having a crystalline material wherein the generation of dislocation lines has been suppressed, by the silicon planar diffraction grating prepared by using a semiconductor process being transferred to a non-crystalline material, and the non-crystalline material substrate being curved and mounted to a curved fixed substrate. L'invention concerne une technologie pour la préparation d'un réseau de diffraction à haute précision, par laquelle un réseau de diffraction incurvé ayant une courbure désirée peut être préparé par déformation de manière plastique, le long d'un substrat incurvé, d'un réseau de diffraction plat préparé sur un substrat de silicium par un processus à semi-conducteur. La technologie est caractérisée par l'obtention d'un réseau de diffraction incurvé ayant un matériau cristallin dans lequel la génération de lignes de dislocation a été supprimée, par le réseau de diffraction plat en silicium préparé par l'utilisation d'un processus à semi-conducteurs qui est transféré sur un matériau non cristallin, et le substrat de matériau non cristallin étant incurvé et monté sur un substrat fixe incurvé.
Bibliography:Application Number: WO2014JP52090