3D MEMORY

Three-dimensional memory cells and methods of making and using the memory cells are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory can include a memory stack. Such a memory stack can include memory cells and a dielectric between adjacent memory cells, eac...

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Main Authors JAYANTI, SRIKANT, MAURI, AURELIO GIANCARLO, FAN, DARWIN FRANSEDA, BRIGHTEN, JAMES, HOPKINS, JOHN, SIMSEK-EGE, FATMA ARZUM
Format Patent
LanguageEnglish
French
Published 31.07.2014
Subjects
ELECTRICITY
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Summary:Three-dimensional memory cells and methods of making and using the memory cells are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory can include a memory stack. Such a memory stack can include memory cells and a dielectric between adjacent memory cells, each memory cell including a control gate and a charge storage structure. The memory cell can further include a barrier material between the charge storage structure and the control gate, the charge storage structure and the barrier material having a substantially equal dimension. La présente invention concerne de façon générale des cellules de mémoire tridimensionnelles et des procédés de fabrication et d'utilisation des cellules de mémoire. Selon un ou plusieurs modes de réalisation, une mémoire verticale tridimensionnelle peut comprendre une pile de mémoires. Ladite pile de mémoires peut comprendre des cellules de mémoire et un diélectrique entre des cellules de mémoire adjacentes, chaque cellule de mémoire comprenant une porte de commande et une structure de stockage de charge. La cellule de mémoire peut en outre comprendre un matériau barrière entre la structure de stockage de charge et la porte de commande, la structure de stockage de charge et le matériau barrière présentant une dimension sensiblement égale.
Bibliography:Application Number: WO2014US12798