SILICON PRECURSOR COMPOUNDS, AND METHOD FOR DEPOSITING THIN FILM CONTAINING SILICON USING SAME

• Main Authors: HAN, WON SEOK, KOH, WON YONG
• Format: Patent
• Language: English; French; Korean
• Published: 05.06.2014
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to silicon precursor compounds and method for producing said silicon precursor compounds, to precursor compounds for depositing thin film containing silicon including the silicon precursor compounds, and to a method for depositing thin film containing silicon using said precursor compounds. La présente invention concerne des composés de précurseur de silicium et un procédé de production desdits composés de précurseur de silicium, des composés de précurseur pour déposer un film mince contenant du silicium comprenant les composés de précurseur de silicium, et un procédé de dépôt de film mince contenant du silicium à l'aide desdits composés de précurseur.