ENHANCED CAPTURE PADS FOR THROUGH SEMICONDUCTOR VIAS

Method of forming a capture pad on a semiconductor substrate. The method includes providing a semiconductor substrate [300] having an active side and an inactive side and having a plurality of unfilled TSVs extending between the active side and the inactive side; filling the TSVs [304] with a metal...

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Bibliographic Details
Main Authors LAFONTANT, GARY, VOLANT, RICHARD, P, PETRARC, KEVIN, S, FAROOQ, MUKTA, G, GRIESEMER, JOHN, A
Format Patent
LanguageEnglish
French
Published 15.05.2014
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