ENHANCED CAPTURE PADS FOR THROUGH SEMICONDUCTOR VIAS
Method of forming a capture pad on a semiconductor substrate. The method includes providing a semiconductor substrate [300] having an active side and an inactive side and having a plurality of unfilled TSVs extending between the active side and the inactive side; filling the TSVs [304] with a metal...
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Main Authors | , , , , |
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Format | Patent |
Language | English French |
Published |
15.05.2014
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Subjects | |
Online Access | Get full text |
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