RESISTANCE CHANGE MEMORY ELEMENT
Provided is a resistance change memory element (20A) that includes: a resistance change insulating film (8); a source electrode (17A) arranged on a first principal surface of the resistance change insulating film; a drain electrode (18A) arranged on the first principal surface; and a gate electrode...
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| Main Authors | , , , |
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| Format | Patent |
| Language | English French Japanese |
| Published |
06.03.2014
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Provided is a resistance change memory element (20A) that includes: a resistance change insulating film (8); a source electrode (17A) arranged on a first principal surface of the resistance change insulating film; a drain electrode (18A) arranged on the first principal surface; and a gate electrode (19A) arranged on a second principal surface of the resistance change insulating film, the second principal surface being opposite to the first principal surface.
L'invention concerne un élément de mémoire à changement de résistance (20A) comprenant : un film isolant à changement de résistance (8) ; une électrode source (17A) agencée sur une première surface principale du film isolant à changement de résistance ; une électrode drain (18A) agencée sur la première surface principale ; et une électrode grille (19A) agencée sur une seconde surface principale du film isolant à changement de résistance, la seconde surface principale étant opposée à la première surface principale. |
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| AbstractList | Provided is a resistance change memory element (20A) that includes: a resistance change insulating film (8); a source electrode (17A) arranged on a first principal surface of the resistance change insulating film; a drain electrode (18A) arranged on the first principal surface; and a gate electrode (19A) arranged on a second principal surface of the resistance change insulating film, the second principal surface being opposite to the first principal surface.
L'invention concerne un élément de mémoire à changement de résistance (20A) comprenant : un film isolant à changement de résistance (8) ; une électrode source (17A) agencée sur une première surface principale du film isolant à changement de résistance ; une électrode drain (18A) agencée sur la première surface principale ; et une électrode grille (19A) agencée sur une seconde surface principale du film isolant à changement de résistance, la seconde surface principale étant opposée à la première surface principale. |
| Author | KATSU MITSUNORI SASAJIMA YUICHI SATO MASAYUKI NIGO SEISUKE |
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| DocumentTitleAlternate | ÉLÉMENT DE MÉMOIRE À CHANGEMENT DE RÉSISTANCE |
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| Notes | Application Number: WO2013JP71742 |
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| RelatedCompanies | TAIYO YUDEN CO., LTD |
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| Snippet | Provided is a resistance change memory element (20A) that includes: a resistance change insulating film (8); a source electrode (17A) arranged on a first... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | RESISTANCE CHANGE MEMORY ELEMENT |
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