RESISTANCE CHANGE MEMORY ELEMENT

Provided is a resistance change memory element (20A) that includes: a resistance change insulating film (8); a source electrode (17A) arranged on a first principal surface of the resistance change insulating film; a drain electrode (18A) arranged on the first principal surface; and a gate electrode...

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Bibliographic Details
Main Authors NIGO SEISUKE, SASAJIMA YUICHI, KATSU MITSUNORI, SATO MASAYUKI
Format Patent
LanguageEnglish
French
Japanese
Published 06.03.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a resistance change memory element (20A) that includes: a resistance change insulating film (8); a source electrode (17A) arranged on a first principal surface of the resistance change insulating film; a drain electrode (18A) arranged on the first principal surface; and a gate electrode (19A) arranged on a second principal surface of the resistance change insulating film, the second principal surface being opposite to the first principal surface. L'invention concerne un élément de mémoire à changement de résistance (20A) comprenant : un film isolant à changement de résistance (8) ; une électrode source (17A) agencée sur une première surface principale du film isolant à changement de résistance ; une électrode drain (18A) agencée sur la première surface principale ; et une électrode grille (19A) agencée sur une seconde surface principale du film isolant à changement de résistance, la seconde surface principale étant opposée à la première surface principale.
Bibliography:Application Number: WO2013JP71742