III NITRIDE SEMICONDUCTOR MULTILAYER SUBSTRATE AND III NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR

• Main Authors: TERAGUCHI, NOBUAKI, MATSUBAYASHI, MASAKAZU, ITO, NOBUYUKI
• Format: Patent
• Language: English; French; Japanese
• Published: 31.10.2013
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A III nitride semiconductor multilayer substrate (100) is provided with: a channel layer (5), i.e., a III nitride semiconductor; and a barrier layer (6), i.e., a III nitride semiconductor, which is formed on the channel layer (5), and which forms a hetero interface with the channel layer (5). The barrier layer (6, 206) has a Cu concentration of 1.0×1010 (number of atoms/cm2) or less in a region having a depth of 10 nm or less from the surface. Le substrat multicouche semi-conducteur au nitrure III (100) selon l'invention comporte : une couche de canal (5), c.-à-d. un semi-conducteur au nitrure III ; et une couche de barrière (6), c.-à-d. un semi-conducteur au nitrure III, lequel est formé sur la couche de canal (5), et forme une interface d'hétérojonction avec la couche de canal (5). La couche de barrière (6, 206) a une concentration en Cu inférieure ou égale à 1,0×1010 (nombre d'atomes/cm2) dans une zone dont la profondeur est inférieure ou égale à 10 nm depuis la surface.