METHOD FOR MANUFACTURING CMP COMPOSITION AND APPLICATION THEREOF

Provided is a process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of borophosphosilicate glass (BPSG) material in the presence of a chemical mechanical polishing (CMP) composition which comprises: (A) inorganic particles, organic particles, or a mixture...

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Bibliographic Details
Main Authors YU-SHEN, EASON SU, VENKATARAMAN, SHYAM SUNDAR
Format Patent
LanguageEnglish
French
Published 27.06.2013
Subjects
ADHESIVES
AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G
BASIC ELECTRIC ELEMENTS
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS
CHEMISTRY
COMPOSITIONS BASED THEREON
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERAL PROCESSES OF COMPOUNDING
GLASS
JOINING GLASS TO GLASS OR OTHER MATERIALS
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MINERAL OR SLAG WOOL
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
ORGANIC MACROMOLECULAR COMPOUNDS
PAINTS
POLISHES
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SEMICONDUCTOR DEVICES
SKI WAXES
SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS
SURFACE TREATMENT OF GLASS
THEIR PREPARATION OR CHEMICAL WORKING-UP
WORKING-UP
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Summary:Provided is a process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of borophosphosilicate glass (BPSG) material in the presence of a chemical mechanical polishing (CMP) composition which comprises: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of anionic phosphate or phosphonate as dispersing agent or charge reversal agent, (C) at least one type of surfactant, and (D) an aqueous medium. L'invention concerne un procédé pour la fabrication de dispositifs semi-conducteurs comprenant le polissage chimico-mécanique de matériau de verre de borophosphosilicate (BPSG) en présence d'une composition de polissage chimico-mécanique (CMP) qui comprend : (A) des particules inorganiques, des particules organiques ou un mélange ou composite de celles-ci, (B) au moins un type de phosphate ou phosphonate anionique comme agent dispersant ou agent d'inversion de charges, (C) au moins un type de tensio-actif, et (D) un milieu aqueux.
Bibliography:Application Number: WO2011IB55862