PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, PRODUCTION DEVICE FOR SEMICONDUCTOR DEVICE, AND STORAGE MEDIUM

The present invention comprises the following steps: a step for accommodating inside of a processing chamber a substrate in which a silicon-containing film has been formed; a step for providing gas to the inside of the processing chamber from a gas providing unit, and for making the pressure in the...

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Bibliographic Details
Main Authors WADA YUICHI, SAKUMA HARUNOBU, TATENO HIDETO, AMANO TOMIHIRO, HIYAMA SHIN, ASHIHARA HIROSHI
Format Patent
LanguageEnglish
French
Japanese
Published 10.05.2013
Subjects
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