PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, PRODUCTION DEVICE FOR SEMICONDUCTOR DEVICE, AND STORAGE MEDIUM
The present invention comprises the following steps: a step for accommodating inside of a processing chamber a substrate in which a silicon-containing film has been formed; a step for providing gas to the inside of the processing chamber from a gas providing unit, and for making the pressure in the...
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Main Authors | , , , , , |
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Format | Patent |
Language | English French Japanese |
Published |
10.05.2013
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Subjects | |
Online Access | Get full text |
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