PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, PRODUCTION DEVICE FOR SEMICONDUCTOR DEVICE, AND STORAGE MEDIUM
The present invention comprises the following steps: a step for accommodating inside of a processing chamber a substrate in which a silicon-containing film has been formed; a step for providing gas to the inside of the processing chamber from a gas providing unit, and for making the pressure in the...
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| Main Authors | , , , , , |
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| Format | Patent |
| Language | English French Japanese |
| Published |
10.05.2013
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| Subjects | |
| Online Access | Get full text |
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| Abstract | The present invention comprises the following steps: a step for accommodating inside of a processing chamber a substrate in which a silicon-containing film has been formed; a step for providing gas to the inside of the processing chamber from a gas providing unit, and for making the pressure in the processing chamber at least atmospheric pressure; and an oxidation step for providing a processing fluid to the substrate from a processing fluid providing unit, and for oxidizing the silicon-containing film.
La présente invention comprend les étapes suivantes : une étape pour recevoir à l'intérieur d'une chambre de traitement un substrat dans lequel un film à teneur en silicium a été formé ; une étape pour alimenter un gaz à l'intérieur de la chambre de traitement depuis une unité d'alimentation en gaz, et pour amener la pression dans la chambre de traitement à une pression au moins atmosphérique ; et une étape d'oxydation pour alimenter un fluide de traitement au substrat depuis une unité d'alimentation en fluide de traitement, et pour oxyder le film à teneur en silicium. |
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| AbstractList | The present invention comprises the following steps: a step for accommodating inside of a processing chamber a substrate in which a silicon-containing film has been formed; a step for providing gas to the inside of the processing chamber from a gas providing unit, and for making the pressure in the processing chamber at least atmospheric pressure; and an oxidation step for providing a processing fluid to the substrate from a processing fluid providing unit, and for oxidizing the silicon-containing film.
La présente invention comprend les étapes suivantes : une étape pour recevoir à l'intérieur d'une chambre de traitement un substrat dans lequel un film à teneur en silicium a été formé ; une étape pour alimenter un gaz à l'intérieur de la chambre de traitement depuis une unité d'alimentation en gaz, et pour amener la pression dans la chambre de traitement à une pression au moins atmosphérique ; et une étape d'oxydation pour alimenter un fluide de traitement au substrat depuis une unité d'alimentation en fluide de traitement, et pour oxyder le film à teneur en silicium. |
| Author | TATENO HIDETO HIYAMA SHIN ASHIHARA HIROSHI AMANO TOMIHIRO SAKUMA HARUNOBU WADA YUICHI |
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| DocumentTitleAlternate | PROCÉDÉ DE PRODUCTION POUR DISPOSITIF SEMI-CONDUCTEUR, DISPOSITIF DE PRODUCTION POUR DISPOSITIF SEMI-CONDUCTEUR ET SUPPORT DE STOCKAGE |
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| Notes | Application Number: WO2012JP78284 |
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| RelatedCompanies | HITACHI KOKUSAI ELECTRIC INC |
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| Snippet | The present invention comprises the following steps: a step for accommodating inside of a processing chamber a substrate in which a silicon-containing film has... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, PRODUCTION DEVICE FOR SEMICONDUCTOR DEVICE, AND STORAGE MEDIUM |
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