ELECTRODE MATERIAL, ELECTRODE, SECONDARY CELL, AND METHOD FOR PRODUCING ELECTRODE MATERIAL
Provided is an electrode material of excellent tab weldability, and capable of forming thin films of the electrode material, and with which low internal resistance of the cell may be achieved. The electrode material (1) is equipped with a base material (1a) including metal foil, and a conductive sub...
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Main Authors | , , , |
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Format | Patent |
Language | English French Japanese |
Published |
02.05.2013
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Subjects | |
Online Access | Get full text |
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Summary: | Provided is an electrode material of excellent tab weldability, and capable of forming thin films of the electrode material, and with which low internal resistance of the cell may be achieved. The electrode material (1) is equipped with a base material (1a) including metal foil, and a conductive substance (1b). The surface of the base material (1a) is constituted by an exposed flat portion and a plurality of depressions (average depth: 0.3 µm-3.0 µm inclusive). The conductive substance (1b), which is disposed in the depressions, is disposed in a staggered pattern on the surface of the base material (1a), and the coverage of the base material (1a) surface by the conductive substance (1b) is 1-80%.
L'invention concerne un matériau d'électrode caractérisé par une excellente soudabilité des languettes et capable de former des films minces du matériau d'électrode, et permettant d'obtenir une faible résistance interne de l'élément. Le matériau (1) d'électrode est doté d'un matériau (1a) de base comprenant une feuille métallique et d'une substance conductrice (1b). La surface du matériau (1a) de base est constituée d'une partie plate exposée et d'une pluralité de cuvettes (profondeur moyenne : 0,3 µm à 3,0 µm inclus). La substance conductrice (1b), qui est disposée dans les cuvettes, est disposée en quinconce sur la surface du matériau (1a) de base, le taux de couverture de la surface du matériau (1a) de base par la substance conductrice (1b) allant de 1 à 80%. |
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Bibliography: | Application Number: WO2012JP77128 |