METHOD FOR PRODUCING SUBSTRATE HAVING BUFFER LAYER STRUCTURE FOR GROWING NITRIDE SEMICONDUCTOR LAYER

• Main Authors: TERAGUCHI, NOBUAKI, MATSUBAYASHI, MASAKAZU, HONDA, DAISUKE, ITO, NOBUYUKI, HOTEIDA, MASAYUKI
• Format: Patent
• Language: English; French; Japanese
• Published: 04.04.2013
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A method for producing a substrate which has a buffer layer structure for growing a nitride semiconductor layer comprise: deposition of a first AlN buffer layer (2a) on the (111) main plane of an Si single crystal substrate (1) at a substrate temperature within the range from 600°C to 900°C (inclusive); and deposition of a second AlN buffer layer (2b) on the first AlN buffer layer at substrate temperature more than 900°C. L'invention porte sur un procédé de fabrication d'un substrat qui possède une structure de couche tampon, pour la croissance d'une couche de semi-conducteur au nitrure, et qui comporte : le dépôt d'une première couche tampon AlN (2a) sur le plan principal (111) d'un substrat en silicium monocristallin (1) à une température du substrat dans la plage allant de 600°C à 900°C (inclus) ; le dépôt d'une seconde couche tampon AlN (2b), sur la première couche tampon AlN, à une température du substrat supérieure à 900°C.