PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION

Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorpt...

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Bibliographic Details
Main Authors LAVOIE, ADRIEN, SRIRAM, MANDYAM
Format Patent
LanguageEnglish
French
Published 07.03.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction. L'invention concerne des procédés de dépôt de film sur une surface de substrat incluant des réactions induites par la surface. Selon l'invention, on fait grandir un film sur un ou plusieurs cycles d'adsorption de réactifs et de réaction. Dans un aspect, le procédé est caractérisé par l'alimentation intermittente de substances dopantes dans le film entre les cycles d'adsorption et de réaction.
Bibliography:Application Number: WO2012US51740