HIGH VOLTAGE ISOLATION OF AN INDUCTIVELY COUPLED PLASMA ION SOURCE WITH A LIQUID THAT IS NOT ACTIVELY PUMPED

An inductively-coupled plasma source for a focused charged particle beam system includes a plasma chamber and a fluid that is not actively pumped surrounding the plasma chamber for providing high voltage isolation between the plasma chamber and nearby parts which are at ground potential, such as a c...

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Bibliographic Details
Main Authors UTLAUT, MARK, W, MCGINN, JAMES, B, WELLS, ANDREW, B, PARKER, N., WILLIAM, KELLOGG, SEAN
Format Patent
LanguageEnglish
French
Published 20.06.2013
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Summary:An inductively-coupled plasma source for a focused charged particle beam system includes a plasma chamber and a fluid that is not actively pumped surrounding the plasma chamber for providing high voltage isolation between the plasma chamber and nearby parts which are at ground potential, such as a conductive shield. One or more cooling devices cool the plasma chamber by using evaporative cooling and heat pipes to dissipate the heat from the plasma chamber into a surrounding environment. L'invention concerne une source de plasma à couplage inductif pour un système à faisceau focalisé de particules chargées, comprenant une chambre à plasma ainsi qu'un fluide pompé de manière non active et entourant la chambre à plasma pour fournir une isolation haute tension entre la chambre à plasma et des pièces situées à proximité, qui sont au potentiel de la terre, telles qu'un écran conducteur. Un ou plusieurs dispositifs de refroidissement refroidissent la chambre à plasma par refroidissement par évaporation et chauffent des tuyaux afin de dissiper la chaleur de la chambre à plasma dans un milieu environnant.
Bibliography:Application Number: WO2012US43563