OHMIC CONTACT BETWEEN THIN FILM SOLAR CELL AND CARBON-BASED TRANSPARENT ELECTRODE
A photovoltaic device and method include a photovoltaic stack having an N-doped layer (112), a P-doped layer (108) and an intrinsic layer (1 10). A transparent electrode (104) is formed on the photovoltaic stack and includes a carbon based layer (105) and a high work function metal layer (107). The...
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Main Authors | , , , , |
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Format | Patent |
Language | English French |
Published |
27.12.2012
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Subjects | |
Online Access | Get full text |
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Summary: | A photovoltaic device and method include a photovoltaic stack having an N-doped layer (112), a P-doped layer (108) and an intrinsic layer (1 10). A transparent electrode (104) is formed on the photovoltaic stack and includes a carbon based layer (105) and a high work function metal layer (107). The high work function metal layer is disposed at an interface between the carbon based layer and the P-doped layer such that the high work function metal layer forms a reduced barrier contact and is light transmissive.
L'invention concerne un dispositif photovoltaïque et un procédé associé, comprenant un empilement photovoltaïque pourvu d'une couche dopée N (112), d'une couche dopée P (108) et d'une couche intrinsèque (110). Une électrode transparente (104) est formée sur l'empilement photovoltaïque et comprend une couche à base de carbone (105) et une couche métallique à travail de sortie élevé (107). Cette dernière couche est disposée au niveau d'une interface entre la couche à base de carbone et la couche dopée P, de sorte à former un contact de barrière réduit et à transmettre la lumière. |
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Bibliography: | Application Number: WO2012US40881 |