PASSIVATED UPSTANDING NANOSTRUCTURES AND METHODS OF MAKING THE SAME

• Main Authors: WOBER, MUNIB, YU, YOUNG-JUNE
• Format: Patent
• Language: English; French
• Published: 29.11.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

Described herein is a device comprising: a substrate; one or more of a nanostructure extending essentially perpendicularly from the substrate; wherein the nanostructure comprises a core of a doped semiconductor, an first layer disposed on the core, and a second layer of an opposite type from the core and disposed on the first layer. L'invention concerne un dispositif qui comporte : un substrat ; une ou plusieurs nanostructures dirigées essentiellement perpendiculairement au substrat, la nanostructure comportant un coeur d'un semi-conducteur dopé, une première couche disposée sur le coeur et une seconde couche d'un type opposé au coeur et disposée sur la première couche.