METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR THIN FILM CRYSTAL

A method for producing a semiconductor thin film crystal which forms a semiconductor thin film by supplying gas onto a substrate, the method characterized by depositing an SiGe or Ge single crystal or polycrystal on the substrate using as a supply gas monosilane (SiH4), monogermane (GeH4) and fluori...

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Main Authors NAGAI, TAKEHIKO, KONDO, MICHIO, NOGE, HIROSHI
Format Patent
LanguageEnglish
French
Japanese
Published 29.11.2012
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Abstract A method for producing a semiconductor thin film crystal which forms a semiconductor thin film by supplying gas onto a substrate, the method characterized by depositing an SiGe or Ge single crystal or polycrystal on the substrate using as a supply gas monosilane (SiH4), monogermane (GeH4) and fluorine (F2), and an inert gas that dilutes them, wherein the volume flow ratio of the monogermane relative to the monosilane is 0.005-1, the flow ratio of the fluorine is 0.5-4 in a volume flow ratio, the substrate temperature is 350-650°C, and the pressure is 13.3 Pa-1.33 kPa. La présente invention concerne un procédé de production d'un cristal en couche mince semi-conductrice qui permet de former une couche mince semi-conductrice en délivrant un gaz sur un substrat. Le procédé est caractérisé par une étape consistant à déposer un monocristal de SiGe ou de Ge ou un polycristal sur le substrat en utilisant, à titre de gaz d'apport, du gaz de monosilane (SiH4), du gaz de germane (GeH4), du gaz de fluor (F2) et un gaz inerte qui les dilue. Le rapport de débit volumique du germane par rapport au monosilane se situe entre 0,005 et 1. Le rapport de débit du fluor se situe entre 0,5 et 4 dans un rapport de débit volumique. La température du substrat se situe entre 350 et 650 °C et la pression entre 13,3 Pa et 1,33 kPa.
AbstractList A method for producing a semiconductor thin film crystal which forms a semiconductor thin film by supplying gas onto a substrate, the method characterized by depositing an SiGe or Ge single crystal or polycrystal on the substrate using as a supply gas monosilane (SiH4), monogermane (GeH4) and fluorine (F2), and an inert gas that dilutes them, wherein the volume flow ratio of the monogermane relative to the monosilane is 0.005-1, the flow ratio of the fluorine is 0.5-4 in a volume flow ratio, the substrate temperature is 350-650°C, and the pressure is 13.3 Pa-1.33 kPa. La présente invention concerne un procédé de production d'un cristal en couche mince semi-conductrice qui permet de former une couche mince semi-conductrice en délivrant un gaz sur un substrat. Le procédé est caractérisé par une étape consistant à déposer un monocristal de SiGe ou de Ge ou un polycristal sur le substrat en utilisant, à titre de gaz d'apport, du gaz de monosilane (SiH4), du gaz de germane (GeH4), du gaz de fluor (F2) et un gaz inerte qui les dilue. Le rapport de débit volumique du germane par rapport au monosilane se situe entre 0,005 et 1. Le rapport de débit du fluor se situe entre 0,5 et 4 dans un rapport de débit volumique. La température du substrat se situe entre 350 et 650 °C et la pression entre 13,3 Pa et 1,33 kPa.
Author KONDO, MICHIO
NOGE, HIROSHI
NAGAI, TAKEHIKO
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KONDO, MICHIO
NOGE, HIROSHI
NAGAI, TAKEHIKO
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Snippet A method for producing a semiconductor thin film crystal which forms a semiconductor thin film by supplying gas onto a substrate, the method characterized by...
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SubjectTerms AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
CRYSTAL GROWTH
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Title METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR THIN FILM CRYSTAL
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