METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR THIN FILM CRYSTAL

• Main Authors: NAGAI, TAKEHIKO, KONDO, MICHIO, NOGE, HIROSHI
• Format: Patent
• Language: English; French; Japanese
• Published: 29.11.2012
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A method for producing a semiconductor thin film crystal which forms a semiconductor thin film by supplying gas onto a substrate, the method characterized by depositing an SiGe or Ge single crystal or polycrystal on the substrate using as a supply gas monosilane (SiH4), monogermane (GeH4) and fluorine (F2), and an inert gas that dilutes them, wherein the volume flow ratio of the monogermane relative to the monosilane is 0.005-1, the flow ratio of the fluorine is 0.5-4 in a volume flow ratio, the substrate temperature is 350-650°C, and the pressure is 13.3 Pa-1.33 kPa. La présente invention concerne un procédé de production d'un cristal en couche mince semi-conductrice qui permet de former une couche mince semi-conductrice en délivrant un gaz sur un substrat. Le procédé est caractérisé par une étape consistant à déposer un monocristal de SiGe ou de Ge ou un polycristal sur le substrat en utilisant, à titre de gaz d'apport, du gaz de monosilane (SiH4), du gaz de germane (GeH4), du gaz de fluor (F2) et un gaz inerte qui les dilue. Le rapport de débit volumique du germane par rapport au monosilane se situe entre 0,005 et 1. Le rapport de débit du fluor se situe entre 0,5 et 4 dans un rapport de débit volumique. La température du substrat se situe entre 350 et 650 °C et la pression entre 13,3 Pa et 1,33 kPa.