SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

• Main Author: KUBO, SHUNJI
• Format: Patent
• Language: English; French; Japanese
• Published: 25.07.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An N-type well (NW) is formed to a predetermined depth from the principal surface in a semiconductor substrate (SUB), and a P-type well (PW) and an N-type drain region (ND) are formed in the N-type well. An N-type source region (NS), an N+-type source region (NNS), and a P+-type impurity region (BCR...