SEMICONDUCTOR CHIP AND SEMICONDUCTOR DEVICE

Provided is a semiconductor chip (11) which comprises an electrode pad (12), a passivation film (13), and a bump (15). The passivation film (13) comprises a plurality of openings (14). The bump (15) is formed by means of electroless plating and also comprises an uneven section in the surface of the...

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Bibliographic Details
Main Authors KOYAMA, YASUHIRO, AGOH, FUJIO, SHIMOYAMA, AKIO, WATANABE, YUJI
Format Patent
LanguageEnglish
French
Japanese
Published 23.08.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a semiconductor chip (11) which comprises an electrode pad (12), a passivation film (13), and a bump (15). The passivation film (13) comprises a plurality of openings (14). The bump (15) is formed by means of electroless plating and also comprises an uneven section in the surface of the bump (15). The depth of a recess in the uneven section of the bump (15) is set according to the height of the bump (15) and the spaces between the openings (14). La présente invention concerne une puce à semi-conducteur (11) qui comprend une garniture d'électrode (12), un film de passivation (13) et une bosse (15). Le film de passivation (13) comprend une pluralité d'ouvertures (14). La bosse (15) est formée par dépôt autocatalytique et comprend également une section inégale à la surface de la bosse (15). La profondeur d'une gorge dans la section inégale de la bosse (15) est fixée selon la hauteur de la bosse (15) et les espaces entre les ouvertures (14).
Bibliography:Application Number: WO2012JP53569