A METHOD OF MANUFACTURING A SOLAR CELL AND SOLAR CELL THUS OBTAINED

• Main Authors: WOLTERS, ROBERTUS, ADRIANUS, MARIA, LUCHIES, JOHANNES, REINDER, MARC, VAN HOOFF, WIJNAND, MICHIEL, GODFRIED, HERES, KLAAS
• Format: Patent
• Language: English; French
• Published: 16.08.2012
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The process includes the manufacturing of a solar cell comprising boron doping after phosphorous doping, so as to obtain a substrate (10) with a double-diffused field region (33) and emitters (30), suitably selective emitters, together forming a p-i-n-diode construction. In order to prevent the formation of boron rich layers detrimental for carrier lifetime, a diffusion resistance layer (22) is applied within the through-holes (20). L'invention concerne la fabrication d'une cellule solaire comprenant un dopage au bore après un dopage au phosphore, afin d'obtenir un substrat (10) doté d'une région de champ (33) et des émetteurs (30) à double diffusion, des émetteurs adéquatement sélectifs, qui forment ensemble une structure de diode p-i-n. Afin d'éviter la formation de couches riches en bore qui seraient néfastes pour la durée de vie des porteurs, une couche de résistance par diffusion (22) est appliquée dans les trous traversants (20).