SUBSTRATE HAVING ETCHING MASK AND METHOD FOR PRODUCING SAME

Provided are: a substrate that has an etching mask and that is capable of high definition patterning; and a method for producing the substrate. A photosensitive material is applied onto the surface of the substrate and subjected to exposure/development to form a resist pattern, a DLC coating film is...

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Main Authors SUGAWARA, SHINTARO, SHIGETA, TATSUO, SHIGETA, KAKU
Format Patent
LanguageEnglish
French
Japanese
Published 16.08.2012
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Abstract Provided are: a substrate that has an etching mask and that is capable of high definition patterning; and a method for producing the substrate. A photosensitive material is applied onto the surface of the substrate and subjected to exposure/development to form a resist pattern, a DLC coating film is formed on the surface of the substrate and resist pattern, the DLC coating film formed on the resist pattern is delaminated together with the resist pattern, and thus a DLC pattern is formed on the surface of the substrate. La présente invention concerne : un substrat qui a un masque de gravure et qui est capable de modelage à haute définition ; et un procédé pour produire le substrat. Un matériau photosensible est appliqué sur la surface du substrat et soumis à une exposition/développement pour former un motif de réserve, un film de revêtement DLC est formé sur la surface du substrat et du motif de réserve, le film de revêtement DLC formé sur le modèle de réserve est délaminé conjointement avec le motif de réserve, et ainsi un motif DLC est formé sur la surface du substrat.
AbstractList Provided are: a substrate that has an etching mask and that is capable of high definition patterning; and a method for producing the substrate. A photosensitive material is applied onto the surface of the substrate and subjected to exposure/development to form a resist pattern, a DLC coating film is formed on the surface of the substrate and resist pattern, the DLC coating film formed on the resist pattern is delaminated together with the resist pattern, and thus a DLC pattern is formed on the surface of the substrate. La présente invention concerne : un substrat qui a un masque de gravure et qui est capable de modelage à haute définition ; et un procédé pour produire le substrat. Un matériau photosensible est appliqué sur la surface du substrat et soumis à une exposition/développement pour former un motif de réserve, un film de revêtement DLC est formé sur la surface du substrat et du motif de réserve, le film de revêtement DLC formé sur le modèle de réserve est délaminé conjointement avec le motif de réserve, et ainsi un motif DLC est formé sur la surface du substrat.
Author SUGAWARA, SHINTARO
SHIGETA, KAKU
SHIGETA, TATSUO
Author_xml – fullname: SUGAWARA, SHINTARO
– fullname: SHIGETA, TATSUO
– fullname: SHIGETA, KAKU
BookMark eNrjYmDJy89L5WSwDg51Cg4JcgxxVfBwDPP0c1dwDXH2ANG-jsHeCo5-Lgq-riEe_i4Kbv5BCgFB_i6hziDZYEdfVx4G1rTEnOJUXijNzaDsBtKtm1qQH59aXJCYnJqXWhIf7m9kYGhkaGBhYmbiaGhMnCoAgEQrvA
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
Physics
DocumentTitleAlternate SUBSTRAT AYANT UN MASQUE DE GRAVURE ET PROCÉDÉ POUR PRODUIRE CELUI-CI
ExternalDocumentID WO2012108464A1
GroupedDBID EVB
ID FETCH-epo_espacenet_WO2012108464A13
IEDL.DBID EVB
IngestDate Fri Jul 19 11:43:33 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
French
Japanese
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_WO2012108464A13
Notes Application Number: WO2012JP52859
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120816&DB=EPODOC&CC=WO&NR=2012108464A1
ParticipantIDs epo_espacenet_WO2012108464A1
PublicationCentury 2000
PublicationDate 20120816
PublicationDateYYYYMMDD 2012-08-16
PublicationDate_xml – month: 08
  year: 2012
  text: 20120816
  day: 16
PublicationDecade 2010
PublicationYear 2012
RelatedCompanies SUGAWARA, SHINTARO
SHIGETA, KAKU
SHIGETA, TATSUO
THINK LABORATORY CO., LTD
RelatedCompanies_xml – name: SHIGETA, KAKU
– name: SUGAWARA, SHINTARO
– name: THINK LABORATORY CO., LTD
– name: SHIGETA, TATSUO
Score 2.967725
Snippet Provided are: a substrate that has an etching mask and that is capable of high definition patterning; and a method for producing the substrate. A...
SourceID epo
SourceType Open Access Repository
SubjectTerms APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
HOLOGRAPHY
LINING MACHINES
MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
MATERIALS FOR SURFACES USED IN PRINTING MACHINES FOR PRINTING,INKING, DAMPING, OR THE LIKE
MATERIALS THEREFOR
ORIGINALS THEREFOR
PERFORMING OPERATIONS
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
PREPARING SUCH SURFACES FOR USE AND CONSERVING THEM
PRINTED CIRCUITS
PRINTING
PRINTING PLATES OR FOILS
PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTINGSURFACES
SEMICONDUCTOR DEVICES
STAMPS
TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TRANSPORTING
TYPEWRITERS
Title SUBSTRATE HAVING ETCHING MASK AND METHOD FOR PRODUCING SAME
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120816&DB=EPODOC&locale=&CC=WO&NR=2012108464A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8Q_HxT1KCiaaLZ2yIrdWMxxIx1iJptBAbyRmgpicYAkRn_fa8NKE889q5prk2v19-1dwdwi_uWepIJWwjl20xIx_Y9yuw6nbqecmtuXelA4Thx2332MrwfFuBzHQtj8oT-mOSIqFES9T035_Xi34nFzd_K5Z14R9L8sZU1uLVCxw7VdSQs3mxEnZSnoRWGiNuspGt4ThWNLQsQK-3gRdrT-hANmjouZbFpVFpHsNvB8Wb5MRQ-xiU4CNe110qwH6-evEuwZ_5oyiUSV3q4PIGHXr-pqx1nEWkHg-fkiURZqB1PJA56ryRIOImjrJ1ygiCPdLop74ea2wvi6BRuWrq3jfKM_qY_eks3ha-dQXE2n6kykKqvfJ1hkY4Vgiw58YVDx4wpOaFVWZu651DZNtLFdvYlHOqm9p86bgWK-de3ukIDnItrs26_KkmC2g
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8Q_MA3RY0fqE00e1tkpW4shpixDoewjcD4eCO0lERjgMiM_75tA8oTr73mcm16vf6u9wHwIM8tdjhhJmPCNQnjluk6mJhVPLMdYVfsqlCJwlFsh33yNnoa5eBzkwuj64T-6OKIUqO41PdM39fLfycW1bGVq0f2LocWL420Ro01Oraw6iNh0Hot6CQ08Q3fl7jNiLuaZpWlsSWexEp78pHtKH0IBnWVl7LcNiqNY9jvSH7z7ARyH5MiFPxN77UiHEbrL-8iHOgYTb6Sg2s9XJ3Cc69fV92O0wCF3qAZv6Ig9ZXjCUVer4W8mKIoSMOEIgnyUKeb0L6vqD0vCs7gvqFmm1Ke8d_yx8NkW_jKOeTni7m4AFR2hasqLOKJkCCLT11m4Qkhgk9xmVdm9iWUdnG62k2-g0KYRu1xuxm3ruFIkZQv1bJLkM--vsWNNMYZu9V7-At5MYXN
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SUBSTRATE+HAVING+ETCHING+MASK+AND+METHOD+FOR+PRODUCING+SAME&rft.inventor=SUGAWARA%2C+SHINTARO&rft.inventor=SHIGETA%2C+TATSUO&rft.inventor=SHIGETA%2C+KAKU&rft.date=2012-08-16&rft.externalDBID=A1&rft.externalDocID=WO2012108464A1