ETCHING PASTE, A PRODUCTION METHOD THEREFOR AND A PATTERN FORMING METHOD USING THE SAME

• Main Author: SHIM, JAE JOON
• Format: Patent
• Language: English; French; Korean
• Published: 21.06.2012
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NATURAL RESINS; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; PAINTS; POLISHES; SEMICONDUCTOR DEVICES

The etching paste of the present invention comprises: (a) an organic binder; (b) phosphoric acid; (c) a nitrogen containing compound; and (d) a solvent, and the (c) nitrogen containing compound is one or more such compound selected from amine-based compounds and ammonium-based compounds. The etching paste can achieve a fine line width, has good etching properties, and allows an improvement in damage to facilities caused by etching paste. La présente invention concerne une pâte d'attaque comprenant : (a) un liant organique ; (b) de l'acide phosphorique ; (c) un composé azoté ; et (d) un solvant, le composé azoté (c) étant un ou plusieurs composé(s) choisi(s) parmi des composés à base d'amine et des composés à base d'ammonium. La pâte d'attaque permet d'obtenir une largeur de trait fine, possède de bonnes propriétés d'attaque, et permet une amélioration des dommages causés aux équipements par la pâte d'attaque.