ZINC OXIDE SINTERED COMPACT, SPUTTERING TARGET, AND ZINC OXIDE THIN FILM

• Main Authors: OMI KENJI, KURAMOCHI HIDETO, MESUDA MASAMI, IIGUSA HITOSHI, SHIBUTAMI TETSUO
• Format: Patent
• Language: English; French; Japanese
• Published: 14.06.2012
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SEMICONDUCTOR DEVICES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE

Provided are a zinc oxide sintered compact with a zirconium content of 10-1,000 ppm and a sputtering target comprising the zinc oxide sintered compact. Also provided is a zinc oxide thin film with a zirconium content of 10-2,000 ppm and a resistivity of 10 O·cm or more. Cette invention concerne un corps fritté d'oxyde de zinc avec une teneur en zirconium de 10-1000 ppm, et une cible de pulvérisation contenant le corps fritté d'oxyde de zinc. L'invention concerne également un film mince d'oxyde de zinc avec une teneur en zirconium de 10-2000 ppm et une résistivité de 10 O·cm ou plus.