SUBSTRATE FOR DISPLAY DEVICE, METHOD FOR PRODUCING SAME, AND DISPLAY DEVICE

• Main Author: KUNIYOSHI, TOKUAKI
• Format: Patent
• Language: English; French; Japanese
• Published: 18.05.2012
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

A thin film transistor substrate (20a) includes: an insulating substrate (10a); a semiconductor layer (13a) provided on the insulating substrate (10a) and having a channel region (C); and a channel protection layer (25) provided in the channel region (C). The channel protection layer (25) is made of a layered film in which first insulating films and second insulating films are layered alternately. If the refractive index of the first insulating film is Ra and the refractive index of the second insulating film is Rb, the relationship Rb/Ra=1.3 holds. L'invention concerne un substrat de transistor à couches minces (20a) qui comprend : un substrat isolant (10a) ; une couche semi-conductrice (13a) formée sur le substrat isolant (10a) et comportant une région de canal (C) ; et une couche de protection de canal (25) formée dans la région de canal (C). La couche de protection de canal (25) est constituée d'un film multicouche dans lequel des premiers films isolants et des deuxièmes films isolants sont déposés en alternance. Si l'indice de réfraction du premier film isolant est Ra et l'indice de réfraction du deuxième film isolant est Rb, la relation Rb/Ra = 1,3 est respectée.