LASER PROCESSING METHOD

• Main Author: KAKUI MOTOKI
• Format: Patent
• Language: English; French; Japanese
• Published: 22.03.2012
• Subjects: BASIC ELECTRIC ELEMENTS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; DEVICES USING STIMULATED EMISSION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; MACHINE TOOLS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; PERFORMING OPERATIONS; PRINTED CIRCUITS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; SOLDERING OR UNSOLDERING; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE; TRANSPORTING; WELDING; WORKING BY LASER BEAM

The present invention relates to a laser processing method that enables high throughput processing that uses an inexpensive pulsed laser light source. A pulsed laser light source (1) that is ideal for use in this laser processing method has a MOPA construction as well as comprising for example a seed light source (10), YbDF (20), bandpass filter (30), YbDF (40) and YbDF (50). This laser processing method is a method in which a metal thin film formed on a transparent substrate is processed using pulsed light illumination, wherein a semiconductor laser included in the seed light source (10) is directly modulated by an electrical signal to repetitively output pulsed light, the pulsed light is amplified by an optical amplifier including the YbDFs (20, 40, 50) as optical amplification media, the half-value total width of the pulsed light that is output after amplification by the optical amplifier is controlled so as to be 0.5 ns or less, and the metal thin film is removed by irradiating, onto the metal thin film through the transparent substrate, the pulsed light having the half-value total width controlled in this way. La présente invention concerne un procédé de traitement au laser qui assure un traitement à haut débit utilisant une source de lumière laser pulsée bon marché. Une source de lumière laser pulsée (1) utilisable idéalement dans ce procédé de traitement au laser comprend une construction MOPA ainsi que, par exemple, une source lumineuse d'ensemencement (10), un YbDF (20), un filtre passe-bande (30), un YbDF (40) et un YbDF (50). Ce procédé de traitement au laser met en oeuvre un film métallique mince formé sur un substrat transparent et traité par éclairement par lumière pulsée. Selon le procédé, un laser à semi-conducteur inclus dans la source lumineuse d'ensemencement (10) est directement modulé par un signal électrique pour générer de manière répétée une lumière pulsée amplifiée par un amplificateur optique comprenant les YbDF (20, 40, 50) comme milieu d'amplification optique; la largeur totale de demi-atténuation de la lumière pulsée générée après amplification par l'amplificateur optique est contrôlée de manière à ne pas dépasser 0,5 ns; et le film mince métallique est retirée par irradiation sur le film mince métallique, à travers le substrat transparent, de la lumière pulsée présentant la largeur totale de demi-atténuation ainsi contrôlée.