ARRAY ARCHITECTURE FOR REDUCED VOLTAGE, LOW POWER SINGLE POLY EEPROM
An Electrically Erasable Programmable Read Only Memory (EEPROM) memory array (FIG. 7) is disclosed. The memory array includes a plurality of memory cells arranged in rows and columns. Each memory cell has a switch (714), an access transistor (716), and a sense transistor (720). A current path of eac...
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Main Authors | , |
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Format | Patent |
Language | English French |
Published |
26.01.2012
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Subjects | |
Online Access | Get full text |
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