ARRAY ARCHITECTURE FOR REDUCED VOLTAGE, LOW POWER SINGLE POLY EEPROM

An Electrically Erasable Programmable Read Only Memory (EEPROM) memory array (FIG. 7) is disclosed. The memory array includes a plurality of memory cells arranged in rows and columns. Each memory cell has a switch (714), an access transistor (716), and a sense transistor (720). A current path of eac...

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Bibliographic Details
Main Authors STIEGLER, HARVEY, J, MITCHELL, ALLAN, T
Format Patent
LanguageEnglish
French
Published 26.01.2012
Subjects
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