LASER LIFT-OFF METHOD AND LASER LIFT-OFF APPARATUS

• Main Authors: TANAKA KAZUYA, MATSUDA RYOZO, NARUMI KEIJI
• Format: Patent
• Language: English; French; Japanese
• Published: 05.01.2012
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; CLADDING OR PLATING BY SOLDERING OR WELDING; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; PERFORMING OPERATIONS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SOLDERING OR UNSOLDERING; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; WELDING; WORKING BY LASER BEAM

Disclosed are a laser lift-off method and a laser lift-off apparatus, wherein a material layer formed on a substrate can be peeled from the substrate without generating cracks in the material layer formed on the substrate. In order to peel the material layer (2) from the substrate (1) at the interface between the substrate and the material layer, a pulsed laser beam is applied, through the substrate (1), to a work (3) wherein the material layer (2) is formed on the substrate (1), while constantly changing the irradiation region on the work (3), such that adjacent irradiation regions of the work (3) overlap each other. Respective laser beams in the overlapping irradiation region are set at levels having energy that exceeds a decomposition threshold value needed to peel the material layer (2) from the substrate (1), thereby having the material layer reliably peeled from the substrate without generating cracks in the material layer formed on the substrate. L'invention concerne un procédé d'extraction laser et un appareil d'extraction laser, une couche de matériau formée sur un substrat pouvant être arrachée du substrat sans générer de fissures dans la couche de matériau formée sur le substrat. Afin d'arracher la couche de matériau (2) du substrat (1) à l'interface entre le substrat et la couche de matériau, un faisceau laser à impulsion est appliqué, à travers le substrat (1), à un ouvrage (3), la couche de matériau (2) étant formée sur le substrat (1), tout en changeant constamment la zone d'irradiation sur l'ouvrage (3), de sorte que des zones d'irradiation adjacentes de l'ouvrage (3) se chevauchent. Les faisceaux laser respectifs dans la zone d'irradiation de chevauchement sont réglés à des niveaux dont l'énergie dépasse une valeur de seuil de décomposition nécessaire pour arracher la couche de matériau (2) du substrat (1), ce qui permet ainsi d'arracher la couche de matériau du substrat de manière fiable sans générer de fissures dans la couche de matériau formée sur le substrat.