NOVEL COMPOUND AND USE THEREOF

Provided is a copper plating technique that enables the filling of high aspect-ratio via-holes and through-holes in semiconductor substrates such as silicon substrates, organic material substrates or ceramic substrates. The disclosed technique involves a copper plating method, a copper plating bath...

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Bibliographic Details
Main Authors SHIMOMURA AYA, SHIMIZU YUMIKO, ISHIZUKA HIROSHI, OYAMA YUTO, SATO TAKURO, TONOOKA YU, YASUDA HIROKI, KOSAKA MIKIKO, OGO YASUHIRO, KIMIZUKA RYOICHI, TAKASU TATSUJI
Format Patent
LanguageEnglish
French
Japanese
Published 03.11.2011
Subjects
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
HETEROCYCLIC COMPOUNDS
MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
METALLURGY
ORGANIC CHEMISTRY
PRINTED CIRCUITS
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
SEMICONDUCTOR DEVICES
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Summary:Provided is a copper plating technique that enables the filling of high aspect-ratio via-holes and through-holes in semiconductor substrates such as silicon substrates, organic material substrates or ceramic substrates. The disclosed technique involves a copper plating method, a copper plating bath and copper plating additives that include a tertiary amine compound, which is obtained by reacting a heterocyclic compound with the epoxy group of a glycidyl ether group of a compound that has three or more glycidyl ether groups, and/or a quaternary amine compound thereof. La présente invention a pour objet une technique de placage de cuivre qui permet le remplissage de rapport élevé d'aspect par l'intermédiaire de pores et à travers des pores dans des substrats semi-conducteurs tels que des substrats de silicium, des substrats de matières organiques et des substrats de céramiques. La technique décrite implique un procédé de placage de cuivre, un bain de placage de cuivre et des additifs de placage de cuivre comprenant un composé d'amine tertiaire, obtenu par la réaction d'un composé hétérocyclique avec le groupe époxy d'un groupe d'éther de glycidyle qui contient trois groupes d'éther de glycidyle ou plus, et/ou un composé d'amine quaternaire.
Bibliography:Application Number: WO2010JP57685