METHOD AND APPARATUS FOR MANUFACTURING THIN FILM SILICON SOLAR CELL

• Main Authors: SHINTANI, KENJI, YAMAGUCHI, SHINSAKU, YAMAMUKA, MIKIO
• Format: Patent
• Language: English; French; Japanese
• Published: 13.10.2011
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

Disclosed is a method for manufacturing a thin film silicon solar cell, which includes: measuring steps (S22, 24, 26) wherein a crystallization rate of a film to be a base film is measured, said film being formed on a substrate by CVD and containing a fine crystalline silicon component; steps (S42, 44, 46) wherein, on the basis of previously obtained relationships among the crystallization rate of the base film, conditions of forming the film on the base film, and the crystallization rate of the film formed on the base film by the CVD under the conditions, film-forming conditions are determined on the basis of the crystallization rate measured in the measuring steps, and a desired crystallization rate of the film, which is formed on the base film and contains the fine crystalline silicon component; and steps (S23, 25, 27) wherein the film containing the fine crystalline silicon component is formed by the CVD on the base film under the determined film-forming conditions, in a second film-forming chamber, which is different from the first film-forming chamber wherein the base film is formed, and which can have the substrate vacuum-transferred thereto from the first film-forming chamber. L'invention concerne un procédé de fabrication d'une cellule solaire au silicium en couche mince, qui comprend : des étapes de mesure (S22, 24, 26) qui consistent à mesurer la vitesse de cristallisation d'un film destiné à être un film de base, ledit film étant formé sur un substrat par CVD et contenant un composé de silicium cristallin à grains fins ; des étapes (S42, 44, 46) qui, sur la base de relations préalablement obtenues entre la vitesse de cristallisation du film de base, les conditions de formation du film sur le film de base et la vitesse de cristallisation du film formé sur le film de base par CVD dans lesdites conditions, consistent à déterminer des conditions de formation de film en fonction de la vitesse de cristallisation mesurée lors des étapes de mesure et de la vitesse de cristallisation souhaitée pour le film qui est formé sur le film de base et qui contient le composé de silicium cristallin à grains fins ; et des étapes (S23, 25, 27) qui consistent à former le film contenant le composé de silicium cristallin à grains fins par CVD sur le film de base dans les conditions de formation de film déterminées, dans une deuxième chambre de formation de film qui est différente de la première chambre de formation de film dans laquelle est formé le film de base, le substrat pouvant être transféré sous vide de la première chambre de formation de film à la deuxième.