TRANSPARENT CONDUCTIVE FILM, METHOD FOR PRODUCING SAME, AND ELECTRONIC DEVICE USING TRANSPARENT CONDUCTIVE FILM

• Main Authors: SUZUKI, YUTA, NAGAMOTO, KOICHI, IWAYA, WATARU, NAGANAWA, SATOSHI, KONDO, TAKESHI
• Format: Patent
• Language: English; French; Japanese
• Published: 06.10.2011
• Subjects: AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G; BASIC ELECTRIC ELEMENTS; CABLES; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS BASED THEREON; CONDUCTORS; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; GENERAL PROCESSES OF COMPOUNDING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INSULATORS; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; PERFORMING OPERATIONS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; THEIR PREPARATION OR CHEMICAL WORKING-UP; TRANSPORTING; WORKING-UP

A base material is provided, on at least one surface, with a gas barrier layer and a transparent conductive film, wherein: the gas barrier layer is configured from a material which at least contains oxygen atoms, nitrogen atoms, and silicon atoms; the surface layer of the gas barrier layer has an oxygen atom abundance of 60 to 75%, a nitrogen atom abundance of 0 to 10%, and a silicon atom abundance of 25 to 35% in relation to the total abundances of the oxygen, nitrogen and silicon atoms; and the surface layer of the gas barrier layer has a film density of 2.4 to 4.0g/cm3. L'invention concerne un matériau de base qui est muni, sur au moins une surface, d'une couche barrière contre les gaz et d'un film conducteur transparent. La couche barrière contre les gaz est constituée d'un matériau qui contient au moins des atomes d'oxygène, des atomes d'azote et des atomes de silicium ; la couche superficielle de la couche barrière contre les gaz présente une teneur en atomes d'oxygène comprise entre 60 et 75 %, une teneur en atomes d'azote comprise entre 0 et 10 %, et une teneur en atomes de silicium comprise entre 25 et 35 % par rapport aux teneurs totales en atomes d'oxygène, d'azote et de silicium ; et la couche superficielle de la couche barrière contre les gaz présente une densité de film comprise entre 2,4 et 4,0 g/cm3.