A THIN FILM PHOTOVOLTAIC CELL, A METHOD FOR MANUFACTURING, AND USE

• Main Author: SKARP, JARMO
• Format: Patent
• Language: English; French
• Published: 30.06.2011
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

A thin film photovoltaic cell (10) comprises an n-type semiconductor window layer (40), a p-type semiconductor absorption layer (5) and a pn-junction (6) at the interface between these two layers, wherein the p-type semiconductor absorption layer is formed of cadmium telluride CdTe. According to the present invention, the n-type semiconductor window layer (40) comprises zinc oxide/sulfide Zn (O,S). La présente invention concerne une photopile photovoltaïque à film mince (10), comprenant une couche à fenêtre semi-conductrice de type n (40), une couche d'absorption semi-conductrice de type p (5), et une couche de jonction p-n (6) à l'interface entre ces deux couches. La couche d'absorption semi-conductrice de type p est formée de tellurure de cadmium CdTe. Selon la présente invention, la couche à fenêtre semi-conductrice de type n (40) comprend de l'oxyde/sulfure de zinc Zn(O,S).