SILVER ALLOY TARGET FOR FORMING REFLECTION ELECTRODE FILM FOR ORGANIC EL ELEMENT, AND METHOD FOR MANUFACTURING THE SILVER ALLOY TARGET

• Main Authors: KOMIYAMA, SHOZO, ITO, IKUO
• Format: Patent
• Language: English; French; Japanese
• Published: 14.04.2011
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Disclosed is a silver alloy target for forming a reflection electrode film for an organic EL element, which has a component composition containing 0.1-1.5 % by mass of In and the balance composed of Ag and unavoidable impurities. The average grain diameter of the crystal grain of the alloy is 150-400 µm, and the variance of the grain diameter of the crystal grains is 20% of the average grain diameter or less. L'invention concerne une cible en alliage d'argent destinée à la formation de film d'électrode réfléchissant pour élément EL organique et est caractéristique en ce que cette cible en alliage d'argent comprend 0,1 à 1,5 % en masse de In, et possède pour le reste une composition d'Ag et des impuretés inévitables; en ce que diamètre de grain moyen des grains cristallins dudit alliage est de 150 à 400µm, et en ce que la variation du diamètre de grain desdits grains cristallins est inférieure ou égale à 20% du diamètre de grain moyen.