PLASMA CVD APPARATUS, PLASMA ELECTRODE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR FILM

• Main Authors: TSUDA, MUTSUMI, SHINTANI, KENJI, TAKI, MASAKAZU, IMAMURA, KEN
• Format: Patent
• Language: English; French; Japanese
• Published: 17.02.2011
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The plasma electrode (30) of a plasma CVD apparatus (40) is configured by providing a main electrode section (21), which is provided with a process gas introducing port (second process gas introducing port (21a)); and a gas shower plate section (23), which is attached to an end portion of the main electrode section and forms a gas diffusion space (DS) between the main electrode section and the gas shower plate section. A plurality of gas jetting ports (23a) for jetting a process gas are formed in the gas shower plate section, and inside of the gas diffusion space, a gas diffusion plate (25), which has a plurality of gas distribution ports (25a) for distributing the process gas, and a plurality of heat transfer pillar sections (27) that pass through the gas distribution ports of the gas diffusion plate and thermally connect the gas shower plate section and the main electrode section to each other, are disposed. A space is formed between the inner wall of each of the gas distribution ports, and the circumferential surface of each of the heat transfer pillar sections that pass through the gas distribution ports. La présente invention concerne un appareil à plasma de dépôt en phase vapeur (CVD) (40), comprenant : une électrode à plasma (30), configurée pour fournir une section d'électrode principale (21), et pourvue d'un orifice d'introduction de gaz de processus (second orifice d'introduction de gaz de processus (21a)) ; et une section de plaque de gerbe de gaz (23), attachée à une partie d'extrémité de la section d'électrode principale, et formant un espace de diffusion de gaz (DS) entre la section d'électrode principale et la section de plaque de gerbe de gaz. Plusieurs orifices d'injection de gaz (23a), destinés à injecter un gaz de processus, sont formés dans la section de plaque de gerbe de gaz. A l'intérieur de l'espace de diffusion de gaz, sont disposées une plaque de diffusion de gaz (25) comportant plusieurs orifices de distribution de gaz (25a) pour distribuer le gaz de processus, et plusieurs sections de colonnes de transfert de chaleur (27) passant à travers les orifices de distribution de gaz de la plaque de diffusion de gaz et raccordant thermiquement l'une à l'autre la section de plaque de gerbe de gaz et la section d'électrode principale. Un espace est formé entre la paroi interne de chaque orifice de distribution de gaz et la surface circonférentielle de chaque section de colonnes de transfert de chaleur passant à travers les orifices de distribution de gaz.