PLANAR ANTENNA MEMBER AND PLASMA PROCESSING DEVICE EQUIPPED WITH SAME

• Main Authors: UEDA ATSUSHI, ADACHI HIKARU, FUKUDA YOSHINORI, OTA RYUSAKU, YOSHIOKA MASAO
• Format: Patent
• Language: English; French; Japanese
• Published: 03.02.2011
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Provided is a planar antenna capable of efficiently introducing microwaves with a lower frequency than the frequency of conventional microwaves into a processing container. The planar antenna (31) has a first slot (32a) and a second slot (32b) disposed in a concentric fashion. The ratio between the distance from the center (OA) to the center (O32a) of the first slot (32a) and the radius (r) of the planar antenna (31) is set to 0.35 to 0.5; the ratio between the distance from the center (OA) to the center (O32b) of the second slot (32b) and the radius (r) is set to 0.7 to 0.85. The longitudinal direction of the first slot (32a) is oriented at an angle of 90° to 105° with respect to the line connecting the center (OA) and the center (O32a); the longitudinal direction of the second slot (32b) is oriented at an angle of 75° to 85° with respect to the line connecting the center (OA) and the center (O32b). Further, the aperture area ratio of the slots in the planar antenna (31) to an effective circular region (31A) of the planar antenna (31) is within the range of 15% to 20%. La présente invention a trait à une antenne plane en mesure d'introduire de façon efficace des hyperfréquences d'une fréquence inférieure à celle des hyperfréquences classiques dans un récipient de traitement. L'antenne plane (31) est pourvue d'une première fente (32a) et d'une seconde fente (32b) disposées de façon concentrique. Le rapport entre la distance du centre (OA) au centre (O32a) de la première fente (32a) et le rayon (r) de l'antenne plane (31) est défini pour être de 0,35 à 0,5 ; le rapport entre la distance du centre (OA) au centre (O32b) de la seconde fente (32b) et le rayon (r) est défini pour être de 0,7 à 0,85. La direction longitudinale de la première fente (32a) est orientée à un angle de 90° à 105° par rapport à la ligne reliant le centre (OA) et le centre (O32a) ; la direction longitudinale de la seconde fente (32b) est orientée à un angle de 75° à 85° par rapport à la ligne reliant le centre (OA) et le centre (O32b). D'autre part, le rapport de la section d'ouverture des fentes dans l'antenne plane (31) à une zone circulaire effective (31A) de l'antenne plane (31) va de 15 % à 20 %.