METHOD FOR FORMING SILICON NITRIDE FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE, AND PLASMA CVD APPARATUS

• Main Authors: NISHITA TATSUO, NAKANISHI TOSHIO, HONDA MINORU, MIYAHARA JUNYA
• Format: Patent
• Language: English; French; Japanese
• Published: 07.10.2010
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method for forming a silicon nitride film is provided with a silicon nitride film forming step wherein plasma is generated by supplying a processing gas which contains a silicon-containing compound gas and a nitrogen-containing gas into a processing container, and a silicon nitride film is formed...