METHODS FOR PREPARING A MELT OF SILICON POWDER FOR SILICON CRYSTAL GROWTH

Methods for preparing a melt from silicon powder for use in growing a single crystal or polycrystalline silicon ingot in accordance with the Czochralski method that include removal of silicon oxides from the powder; application of a vacuum to remove air and other oxidizing gases; controlling the pos...

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Bibliographic Details
Main Authors MASSOUD, JAVIDI, KIMBEL, STEVEN L
Format Patent
LanguageEnglish
French
Published 10.09.2010
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:Methods for preparing a melt from silicon powder for use in growing a single crystal or polycrystalline silicon ingot in accordance with the Czochralski method that include removal of silicon oxides from the powder; application of a vacuum to remove air and other oxidizing gases; controlling the position of the charge relative to the heater during and after melting of the powder and maintaining the charge above its melting temperature for a period of time to allow oxides to dissolve; and use of a removable spacer between the crucible sidewall and the silicon powder charge to reduce oxides and silicon bridging. L'invention porte sur des procédés de préparation d'une masse fondue à partir d'une poudre de silicium en vue d'une utilisation pour la croissance d'un lingot de silicium monocristallin ou polycristallin conformément au procédé de Czochralski. Les procédés comprennent le retrait d'oxydes de silicium à partir de la poudre; l'application d'un vide pour retirer l'air et autres gaz oxydants; le contrôle de la position de la charge par rapport au dispositif de chauffage durant et après la fusion de la poudre et le maintien de la charge au-dessus de sa température de fusion pendant une période de temps apte à permettre aux oxydes de se dissoudre; et l'utilisation d'un espaceur amovible entre la paroi latérale de creuset et la charge de poudre de silicium pour réduire les oxydes et le pontage du silicium.
Bibliography:Application Number: WO2009US63114