METHOD AND APPARATUS FOR HIGH SPEED SILICON OPTICAL MODULATION USING PN DIODE

A method and apparatus for high speed silicon optical modulation is described using a PN diode. In one example, an optical waveguide has adjoining first and second doped semiconductor regions. The first and second regions have opposite doping types and the first doped region extends in two perpendic...

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Bibliographic Details
Main Authors SHETRIT, YOEL, LIAO, LING, LIU, ANSHENG
Format Patent
LanguageEnglish
French
Published 08.07.2010
Subjects
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
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Summary:A method and apparatus for high speed silicon optical modulation is described using a PN diode. In one example, an optical waveguide has adjoining first and second doped semiconductor regions. The first and second regions have opposite doping types and the first doped region extends in two perpendicular directions through the waveguide. L'invention concerne un procédé et un appareil permettant une modulation optique à vitesse élevée au moyen de silicium à l'aide d'une diode à jonction PNPN. Selon un exemple, un guide d'ondes optiques comprend des première et seconde régions semi-conductrices dopées voisines. Lesdites régions ont des types de dopage opposés et la première région dopée s'étend dans deux directions perpendiculaires dans le guide d'ondes.
Bibliography:Application Number: WO2009US58315