SEMICONDUCTOR DEVICE

A semiconductor device (100) has a plurality of through electrodes (5) which penetrate a substrate (1).  The through electrodes (5) are arranged by being separated into three or more electrode groups (7), and each electrode group (7) is composed of three or more two-dimensionally arranged through el...

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Bibliographic Details
Main Authors NISHIO, TAICHI, HIRANO, HIROSHIGE, OTA, YUKITOSHI
Format Patent
LanguageEnglish
French
Japanese
Published 04.03.2010
Subjects
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Summary:A semiconductor device (100) has a plurality of through electrodes (5) which penetrate a substrate (1).  The through electrodes (5) are arranged by being separated into three or more electrode groups (7), and each electrode group (7) is composed of three or more two-dimensionally arranged through electrodes (5). La présente invention concerne un dispositif semi-conducteur (100) qui comporte une pluralité d'électrodes traversantes (5) qui pénètrent dans un substrat (1). Les électrodes traversantes (5) sont disposées de façon à être séparées en trois groupes d'électrodes (7) ou plus, et chaque groupe d'électrodes (7) est composé de trois électrodes traversantes disposées de façon bidimensionnelle (5) ou plus.
Bibliography:Application Number: WO2009JP03432