MANUFACTURING METHOD FOR VAPOR DEPOSITION DEVICE AND THIN-FILM DEVICE

• Main Authors: SHIONO, ICHIRO, MURATA, TAKANORI, NAGAE, EKISHU, HONDA, HIROMITSU, JIANG, YOUSONG
• Format: Patent
• Language: English; French; Japanese
• Published: 07.01.2010
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; PHYSICS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The issue is to provide a vapor deposition device (1) that can limit changes in film-formation conditions over time. The vapor deposition device (1) is provided with a substrate holder (12) that is supported inside a grounded vacuum container (10), a substrate (14) that is held in the substrate holder (12), vapor-generating sources (34, 36) that face the substrate (14) at a distance, an ion gun (38) that irradiates the substrate (14) with ions, and a neutralizer (40) that irradiates the substrate (14) with electrons. The vacuum container (10) is provided with an inner wall (30) that is electrically floated from the vacuum container (10), and the neutralizer (40) is disposed on the inside wall surface of the vacuum container (10) at a distance from the ion gun (38). Le problème à la base de l'invention consiste à proposer un dispositif (1) de dépôt de vapeur qui permet de limiter les variations progressives des conditions de formation de film. Le dispositif (1) de dépôt de vapeur est doté d'un porte-substrat (12) soutenu à l'intérieur d'un récipient (10) sous vide et raccordé à la masse, d'un substrat (14) maintenu sur le porte-substrat (12), de sources (34, 36) de production de vapeur tournées vers le substrat (14) à une certaine distance de ce dernier, d'un canon à ions (38) qui irradie le substrat (14) par des ions et d'un neutraliseur (40) qui irradie le substrat (14) avec des électrons. Le récipient sous vide (10) est doté d'une paroi intérieure (30) qui flotte électriquement par rapport au récipient sous vide (10) et le neutraliseur (40) est disposé sur la surface intérieure de la paroi du récipient sous vide (10) à une certaine distance du canon à ions (38).