ALN BULK SINGLE CRYSTAL, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING ALN SINGLE CRYSTAL BULK

• Main Authors: WINNACKER, ALBRECHT, EPELBAUM, BORIS M, NAGATA, SHUNRO, BICKERMANN, MATTHIAS, HEIMANN, PAUL, FILIP, OCTAVIAN
• Format: Patent
• Language: English; French; Japanese
• Published: 01.10.2009
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Disclosed is an AlN single crystal bulk, which, even when a single crystal of a dissimilar material is used as a crystal, suffers from no significant defects and has high quality. Also disclosed are a process for producing the AlN single crystal bulk and a semiconductor device. The production process is characterized in that a plane inclined by 10 to 80 degrees to a C plane is selected as a surface (1a) of a hexagonal single crystal substrate which is a seed crystal (1) (Fig. 1 (a)) and an AlN single crystal (2) is grown as a growth plane (2a) on the surface (1a) by a sublimation method (Fig. 1(b)). L'invention concerne un monocristal massif d'AlN, qui, même si l'on utilise un monocristal d'une matière différente comme cristal, est exempt de défauts importants et présente une qualité supérieure. L'invention concerne aussi un procédé de production du monocristal massif d'AlN et un dispositif semi-conducteur. Le procédé de production est caractérisé par les étapes consistant à: sélectionner un plan incliné de 10 à 80 degrés par rapport à un plan C comme surface (1a) d'un substrat de monocristal hexagonal constituant un germe cristallin (1) (Fig. 1 (a)), et faire croître un monocristal d'AlN (2) comme plan de croissance (2a) sur la surface(1a) par un procédé de sublimation (Fig. 1(b)).