FINFET WITH SEPARATE GATES AND METHOD FOR FABRICATING A FINFET WITH SEPARATE GATES

• Main Authors: SURDEANU, RADU, SONSKY, JAN
• Format: Patent
• Language: English; French
• Published: 20.08.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a FinFET with separate gates and to a method for fabricating the same. A dielectric gate-separation layer between first and second gate electrodes has an extension in a direction pointing from a first to a second gate layer that is smaller than a lateral extension of...