PLASMA PROCESSING METHOD AND PLASMA PROCESSING SYSTEM

• Main Authors: NISHIKAWA, SEIJI, SHIMAZU, TADASHI, KAFUKU, HIDETAKA
• Format: Patent
• Language: English; French; Japanese
• Published: 06.08.2009
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A plasma processing method and a plasma processing system for depositing an embedded SiN film by applying a bias power. The plasma processing method for growing a silicon nitride film on a substrate (21) to be subjected to plasma processing by using plasma of a material gas containing silicon and hydrogen and a gas containing nitrogen, in which compressive stress is reduced by setting the bias power for making ions impinge on the substrate (21) above a threshold thereby increasing the amount of Si-H bond. La présente invention a trait à un procédé de traitement plasma et à un système de traitement plasma permettant de déposer une couche SiN incorporée en appliquant une énergie de polarisation. Le procédé de traitement plasma permettant de procéder à la croissance d'une couche de nitrure de silicium sur un substrat (21) devant être soumis à un traitement plasma en utilisant le plasma d'un gaz contenant du silicium et de l'hydrogène et d'un gaz contenant de l'azote, dans lequel la contrainte de compression est réduite en réglant l'énergie de polarisation de manière à ce que les ions touchent le substrat (21) au-dessus d'un seuil, ce qui permet ainsi d'augmenter la quantité de liaison Si-H.