SENSOR FOR A MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
The invention encompasses fabrication methods including the steps of preparing a silicon substrate, forming an amorphous IH-V material layer on the silicon substrate, heating the amorphous HI-V material layer, and epitaxially growing HI-V material on the amorphous III-V material layer. L'invent...
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Main Authors | , |
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Format | Patent |
Language | English French |
Published |
04.06.2009
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Subjects | |
Online Access | Get full text |
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Summary: | The invention encompasses fabrication methods including the steps of preparing a silicon substrate, forming an amorphous IH-V material layer on the silicon substrate, heating the amorphous HI-V material layer, and epitaxially growing HI-V material on the amorphous III-V material layer.
L'invention porte sur des procédés de fabrication comprenant les étapes de préparation d'un substrat de silicium, de formation d'une couche de matériau IH-V amorphe sur le substrat de silicium, de chauffage de la couche de matériau HI-V amorphe et de croissance épitaxiale du matériau HI-V sur la couche du matériau III-V amorphe. |
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Bibliography: | Application Number: WO2008US12582 |