SENSOR FOR A MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

The invention encompasses fabrication methods including the steps of preparing a silicon substrate, forming an amorphous IH-V material layer on the silicon substrate, heating the amorphous HI-V material layer, and epitaxially growing HI-V material on the amorphous III-V material layer. L'invent...

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Bibliographic Details
Main Authors IMAI, DARREN, KUPER, CYNTHIA
Format Patent
LanguageEnglish
French
Published 04.06.2009
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:The invention encompasses fabrication methods including the steps of preparing a silicon substrate, forming an amorphous IH-V material layer on the silicon substrate, heating the amorphous HI-V material layer, and epitaxially growing HI-V material on the amorphous III-V material layer. L'invention porte sur des procédés de fabrication comprenant les étapes de préparation d'un substrat de silicium, de formation d'une couche de matériau IH-V amorphe sur le substrat de silicium, de chauffage de la couche de matériau HI-V amorphe et de croissance épitaxiale du matériau HI-V sur la couche du matériau III-V amorphe.
Bibliography:Application Number: WO2008US12582