HYBRID MAGNETOELECTRONIC TRANSISTOR

The present invention may be embodied as a device that is realized by forming the gate of a field-effect transistor (FET) from a ferromagnetic material, forming a so-called "Ferromag-FET." In addition to its usual electrostatic action, the gate of this device generates FMF that provide an...

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Bibliographic Details
Main Authors BAE, JONG-UK, BIRD, JONATHAN, P, LIN, TENG-YIN
Format Patent
LanguageEnglish
French
Published 22.01.2009
Subjects
ELECTRICITY
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