ION IMPLANTER, INTERNAL STRUCTURE OF ION IMPLANTER AND METHOD OF FORMING A COATING LAYER IN THE ION IMPLANTER

An ion implanter includes a process chamber and a coating layer. The process chamber receives a substrate and provides a space to perform an ion implantation process on the substrate. The coating layer is disposed on an inner wall of the process chamber to reduce contamination of the substrate and i...

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Bibliographic Details
Main Authors YE, KYUNG-HWAN, REIM, YONG-SUP, JANG, KYUNG-IC, KIM, SAM-WOONG
Format Patent
LanguageEnglish
French
Published 15.01.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An ion implanter includes a process chamber and a coating layer. The process chamber receives a substrate and provides a space to perform an ion implantation process on the substrate. The coating layer is disposed on an inner wall of the process chamber to reduce contamination of the substrate and includes the same material as that of the substrate. L'invention concerne un implanteur d'ions comprenant une chambre de traitement et une couche de revêtement. La chambre de traitement reçoit un substrat et offre un espace permettant de mettre en oeuvre un processus d'implantation d'ions sur le substrat. La couche de revêtement est appliquée sur une paroi interne de la chambre de traitement pour réduire la contamination du substrat et elle est constituée d'une matière identique à celle du substrat.
Bibliography:Application Number: WO2008KR03930