OXIDE SINTER, PROCESS FOR PRODUCING THE SAME, TARGET, AND TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT CONDUCTIVE SUBSTRATE BOTH OBTAINED FROM THE TARGET

• Main Authors: ABE, YOSHIYUKI, NAKAYAMA, TOKUYUKI
• Format: Patent
• Language: English; French; Japanese
• Published: 15.01.2009
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CABLES; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; CONDUCTORS; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INSULATORS; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; LIME, MAGNESIA; METALLURGY; PERFORMING OPERATIONS; REFRACTORIES; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING; TREATMENT OF NATURAL STONE

A sputtering target or ion-plating tablet with which high-rate and nodule-less deposition can be realized; an oxide sinter optimal for obtaining the target or tablet; a process for producing the sinter; and a low-resistivity transparent conductive film obtained from the target or tablet and reduced in blue-light absorption. The oxide sinter comprises indium and gallium in the form of oxides, and is characterized in that it includes an In2O3 phase of a bixbite structure as the main crystal phase and that either a GaInO3 phase of a ß-Ga2O3 type structure or a combination of a GaInO3 phase and a (Ga,In)2O3 phase is finely dispersed in the main crystal phase as crystal grains having an average grain diameter of 5 µm or smaller. The oxide sinter is further characterized by having a gallium content of 10-35 at.%, excluding 35 at.%, in terms of Ga/(In+Ga) atom number ratio. L'invention concerne une cible de pulvérisation cathodique ou une pastille de placage ionique avec lesquels peut être obtenu un dépôt à haut débit et sans nodule ; un aggloméré d'oxydes optimal pour obtenir la cible ou la pastille ; un procédé pour produire l'aggloméré ; et un film conducteur transparent à faible résistivité obtenu à partir de la cible ou de la pastille et dont l'absorption de lumière bleue est réduite. L'aggloméré d'oxydes comprend de l'indium et du gallium sous forme d'oxydes, et se caractérise en ce qu'il comprend une phase de In2O3 d'une structure de béryl comme phase cristalline principale et en ce qu'une phase de GaInO3 d'une structure de type ß-Ga2O3 ou une combinaison d'une phase de GaInO3 et d'une phase de (Ga,In)2O3 est finement dispersée dans la phase cristalline principale sous forme de grains cristallins ayant un diamètre moyen de grain de 5 µm ou moins. L'aggloméré d'oxydes se caractérise en outre par une teneur en gallium de 10-35 % at., 35 % at. exclu, en termes de rapport de nombres d'atomes Ga/(In+Ga).