SELF-ALIGNED PILLAR PATTERNING USING MULTIPLE SPACER MASKS

A method for fabricating a semiconductor mask is described. The image of a series of lines from a first spacer mask is first provided to a mask layer to form a patterned mask layer. The image of a series of lines from a second spacer mask is then provided to the patterned mask layer to form a pillar...

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Bibliographic Details
Main Author BENCHER, CHRISTOPHER, D
Format Patent
LanguageEnglish
French
Published 11.12.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating a semiconductor mask is described. The image of a series of lines from a first spacer mask is first provided to a mask layer to form a patterned mask layer. The image of a series of lines from a second spacer mask is then provided to the patterned mask layer to form a pillar mask comprised of a series of pillars. The image of the series of lines from the second spacer mask is non-parallel with the series of lines from the first spacer mask. L'invention concerne un procédé pour fabriquer un masque à semi-conducteur. L'image d'une série de lignes provenant d'un premier masque d'espacement est d'abord fournie à une couche de masque pour former une couche de masque à motifs. L'image d'une série de lignes provenant d'un second masque d'espacement est ensuite fournie à la couche de masque à motifs pour former un masque de colonnes constitué d'une série de colonnes. L'image de la série de lignes du second masque d'espacement n'est pas parallèle à la série de lignes provenant du premier masque d'espacement.
Bibliography:Application Number: WO2008US06820