ZIRCONIUM, HAFNUIM, TITANIUM, AND SILICON PRECURSORS FOR ALD/CVD

• Main Authors: XU, CHONGYING, STAUF, GREGORY, T, PETERS, DAVID, W, BENAC, BRIAN, HENDRIX, BRYAN, C, CHEN, TIANNIU, ROEDER, JEFFREY, F, MAYLOTT, LEAH, CAMERON, THOMAS, M
• Format: Patent
• Language: English; French
• Published: 08.01.2009
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Zirconium, hafnium, titanium and silicon precursors useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of corresponding zirconium-containing, hafnium- containing, titanium-containing and silicon-containing films, respectively. The disclosed precursors achieve highly conformal deposited films characterized by minimal carbon incorporation. L'invention concerne des précurseurs de zirconium, d'hafnium, de titane et de silicium utiles pour le dépôt de couches atomiques (ALD) et le dépôt en phase vapeur chimique (CVD) de films contenant du zirconium, contenant de l'hafnium, contenant du titane et contenant du silicium correspondant, respectivement. Les précurseurs décrits atteignent des films déposés extrêmement conformes caractérisés par une incorporation de carbone minimale.